Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers

We investigate the below and above threshold frequency response of InGaAsN lasers with different nitrogen content. This is accomplished through detailed analysis of the small signal modulation response of the laser diodes using a comprehensive model based on rate equations and that incorporates the effect of parasitics. For below threshold conditions the model is instrumental in separating the contributions from the parasitics (more severe at low bias) and carrier recombination (predominant at higher bias) to the measured carrier lifetime. It is found that the addition of nitrogen reduces the recombination lifetime, mainly as a result of a four-fold increase in monomolecular recombination which predominates even near threshold. For bias above threshold the analysis compares electrical versus optical modulation frequency responses and concludes that resonance frequency and damping extracted from the electrical modulation responses are significantly influenced by the device parasitics. Instead, it is shown that optical modulation traces allow extraction of a relaxation frequency that is shaped only by the stimulated processes in the laser active region. Even in this case, the damping is found to be affected by the parasitics. When compared with nitrogen free lasers, a reduction in the resonance frequency is observed, while the damping is not altered. The former arises from a factor of ∼2.5 decrease in the combined effect of the differential gain and carrier transport parameters. The latter reflects the more significant contribution of the parasitics to the damping.