• DocumentCode
    774145
  • Title

    Atomic layer deposited HfO2in metal-insulator-metal capacitor for RF IC applications

  • Author

    Jeong, S.-W. ; Roh, Y.

  • Author_Institution
    Sch. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon
  • Volume
    44
  • Issue
    13
  • fYear
    2008
  • Firstpage
    809
  • Lastpage
    810
  • Abstract
    DC and RF characteristics of Si/SiO2(~4 mum)/Ti/Pt-HfO2-Al metal-insulator-metal (MIM) devices were investigated with atomic layer-deposited (ALD) high-k HfO2 films. Excellent DC and RF properties were obtained compared to those using either SiO2 or Si3N4. Both high capacitance density and small frequency-dependent capacitance reduction were observed in the MIM capacitors, in which ALD HfO2 was used as an insulator.
  • Keywords
    MIM devices; aluminium; atomic layer deposition; capacitance; capacitors; hafnium compounds; high-k dielectric thin films; platinum; silicon; silicon compounds; titanium; Si-SiO2-Ti-Pt-HfO2-Al; atomic layer deposition; capacitance density; frequency-dependent capacitance reduction; high-k films; metal-insulator-metal capacitor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20081140
  • Filename
    4550701
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=774145