DocumentCode :
774204
Title :
Organic light-emitting device with surface-modified tungsten-doped indium oxide anode
Author :
Li, G.F. ; Zhang, Q. ; Yu, F. ; Liu, C. ; Wu, H.R.
Author_Institution :
Dept. of Mater. Sci., Fudan Univ., Shanghai
Volume :
44
Issue :
13
fYear :
2008
Firstpage :
818
Lastpage :
819
Abstract :
The work function of tungsten-doped indium oxide (IWO) thin films could be enhanced to 5.5 eV by forming platinum and tungsten codoped indium oxide (In2O3:Pt,W) thin layers on them. With the IWO/In2O3:Pt,W double-layer as the anode, an OLED device with the structure of IWO/In2O3:Pt,W/NPB/Alq3/LiF/Al was fabricated. When the voltage is 14 V, the current density and the brightness of the device reach 1600 mA/cm2 and 2.5times104 cd/m2, respectively.
Keywords :
anodes; indium compounds; organic light emitting diodes; thin films; tungsten; In2O3:Pt,W; OLED; electron volt energy 5.5 eV; organic light-emitting device; platinum; surface-modified tungsten-doped indium oxide anode; thin films;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20081318
Filename :
4550707
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=774204
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