• DocumentCode
    774276
  • Title

    Multiple-wavelength membrane BH-DFB laser arrays

  • Author

    Sakamoto, Shinichi ; Okamoto, Takeshi ; Yamazaki, Tatsuya ; Tamura, Shigeo ; Arai, Shigehisa

  • Author_Institution
    Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Japan
  • Volume
    11
  • Issue
    5
  • fYear
    2005
  • Firstpage
    1174
  • Lastpage
    1179
  • Abstract
    We realized multiple-wavelength laser arrays based on a membrane buried-heterostructure distributed-feedback (BH-DFB) structure fabricated by electron-beam lithography (EBL), CH4/H2 reactive-ion etching, and regrowth by organometallic vapor-phase epitaxy (OMVPE), and investigated their wavelength controllability using two different approaches, i.e., a modulation of the DFB grating period and that of the stripe width. Under optically pumped room-temperature continuous-wave (RT-CW) operation, a wavelength fluctuation for a fixed DFB grating period was found to be less than ±1.2 nm for all 75 samples prepared on the same wafer. A total wavelength span of 64 nm and an average channel spacing of 3.4 nm were obtained in the DFB period modulation range of 311.25 to 335.00 nm with 1.25-nm steps. An average channel spacing of 4.1 nm was also obtained in the stripe modulation range of 1.0-2.8 μm with 0.2-μm steps.
  • Keywords
    MOCVD; channel spacing; distributed feedback lasers; electron beam lithography; optical fabrication; optical pumping; semiconductor growth; semiconductor laser arrays; sputter etching; vapour phase epitaxial growth; 25 degC; BH-DFB laser arrays; DFB grating period; buried-heterostructure distributed-feedback structure; channel spacing; electron-beam lithography; multiple-wavelength membrane; organometallic vapor-phase epitaxy; reactive-ion etching; stripe modulation; Biomembranes; Channel spacing; Controllability; Epitaxial growth; Etching; Gratings; Lithography; Optical arrays; Optical modulation; Optical pumping; Benzocyclobutene (BCB); CH; GaInAsP/InP; distributed-feedback (DFB) laser; membrane laser; organometallic vapor-phase epitaxy (OMVPE) regrowth;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2005.853839
  • Filename
    1564058