Title :
Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W
Author :
Paschke, Katrin ; Sumpf, Bernd ; Dittmar, Frank ; Erbert, Götz ; Staske, Ralf ; Wenzel, Hans ; Tränkle, Günther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
High-brightness tapered diode lasers emitting at 980 nm with electrically separated straight ridge waveguide and tapered gain-guided sections were fabricated. An output power of more than 14 W was achieved in quasi-continuous wave (QCW) operation. The value of the beam propagation ratio M2 remained below 2 up to a power of 7.7 W if the sections were separately contacted. The vertical beam divergence was 18° (FWHM) only.
Keywords :
laser beams; optical fabrication; ridge waveguides; semiconductor lasers; 7.7 W; 980 nm; beam propagation ratio; straight ridge waveguide; tapered diode laser; vertical beam divergence; Diffraction; Diode lasers; Laser beams; Optical device fabrication; Optical waveguides; Power generation; Power lasers; Quantum cascade lasers; Semiconductor lasers; Waveguide lasers; Beam quality; high brightness; high-power laser; semiconductor laser; tapered laser;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2005.853840
