• DocumentCode
    774348
  • Title

    Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W

  • Author

    Paschke, Katrin ; Sumpf, Bernd ; Dittmar, Frank ; Erbert, Götz ; Staske, Ralf ; Wenzel, Hans ; Tränkle, Günther

  • Author_Institution
    Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
  • Volume
    11
  • Issue
    5
  • fYear
    2005
  • Firstpage
    1223
  • Lastpage
    1227
  • Abstract
    High-brightness tapered diode lasers emitting at 980 nm with electrically separated straight ridge waveguide and tapered gain-guided sections were fabricated. An output power of more than 14 W was achieved in quasi-continuous wave (QCW) operation. The value of the beam propagation ratio M2 remained below 2 up to a power of 7.7 W if the sections were separately contacted. The vertical beam divergence was 18° (FWHM) only.
  • Keywords
    laser beams; optical fabrication; ridge waveguides; semiconductor lasers; 7.7 W; 980 nm; beam propagation ratio; straight ridge waveguide; tapered diode laser; vertical beam divergence; Diffraction; Diode lasers; Laser beams; Optical device fabrication; Optical waveguides; Power generation; Power lasers; Quantum cascade lasers; Semiconductor lasers; Waveguide lasers; Beam quality; high brightness; high-power laser; semiconductor laser; tapered laser;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2005.853840
  • Filename
    1564065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=774348