Title :
Thin polyoxide on the top of poly-Si gate to suppress boron penetration for pMOS
Author :
Lin, Yung Hao ; Lee, Chung Len ; Lei, Tan Fu ; Chao, Tien Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/1/1995 12:00:00 AM
Abstract :
A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF/sub 2//sup +/ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.<>
Keywords :
MOS capacitors; MOSFET; annealing; boron; elemental semiconductors; fluorine; getters; integrated circuit technology; ion implantation; semiconductor technology; silicon; B penetration suppression; BF/sub 2/; BF/sub 2//sup +/ implantation; CMOS; F; F gettering; PMOSFET; Si; gate oxide; pMOS devices; poly-Si gate; polysilicon gate; thin polyoxide layer; Annealing; Boron; CMOS technology; Capacitance-voltage characteristics; Chaos; Electric variables; Gettering; Implants; MOS capacitors; Senior members;
Journal_Title :
Electron Device Letters, IEEE
