Impact of fluorine incorporation in the polysilicon emitter of NPN bipolar transistors

Author

Bolognesi, C.R. ; Rowlandson, M.B.

Author_Institution

Semicond. Components Group, Northern Telecom Electron. Ltd., Ottawa, Ont., Canada

Volume

16

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

172

Lastpage

174

Abstract

We demonstrate that fluorine incorporation in the polysilicon emitter of NPN bipolar transistors significantly reduces the current gain h/sub fe/. The gain degradation can be related to a reduction of the barrier to hole transport at the poly-Si/mono-Si interface. In addition to a gain reduction, fluorinated-emitter transistors display lower base recombination currents (at low base-emitter biases) than nonfluorinated emitter devices, suggesting that fluorine passivates recombination centers in the emitter-base space charge region.<>

Keywords

bipolar transistors; elemental semiconductors; fluorine; ion implantation; passivation; silicon; F incorporation; NPN bipolar transistors; Si:F; base recombination currents; current gain reduction; emitter-base space charge region; gain degradation; hole transport barrier; poly-Si/mono-Si interface; polysilicon emitter; recombination centers passivation; BiCMOS integrated circuits; Bipolar transistors; Geometry; Hafnium; Implants; MOSFETs; Microelectronics; Radiative recombination; Space charge; Telecommunications;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.382230

Filename

382230