Title :
Long-Range Surface Plasmons Along Membrane-Supported Metal Stripes
Author :
Berini, Pierre ; Berini, Pierre ; Charbonneau, R. ; Lahoud, N.
Abstract :
Long-range surface plasmon-polaritons propagating along a thin metal stripe on a supporting ultrathin freestanding dielectric membrane (the ldquo<i>membrane-supported metal stripe</i> rdquo) have been investigated in detail theoretically and experimentally. The materials considered for the structure are Au on a thin Cr or Ti adhesion layer as the stripe, Si<sub>3</sub>N<sub>4</sub> or SiO<sub>2</sub> as the membrane, and vacuum (air) or H<sub>2</sub>O as the background. Three operating wavelengths were considered: lambda<sub>0</sub> = 632.8, 1310, and 1550 nm. Theoretical results reveal that the long-range mode in this structure has a moderate mode power attenuation (MPA ~ 2-12 dB/mm at lambda<sub>0</sub> = 1310 nm), good confinement [ <i>n</i><sub>eff</sub> - <i>n</i><sub>1</sub> ~ (1-3) ×10<sup>-3</sup> ], a good <i>M</i><sub>2</sub> figure of merit (10-25), and a reasonable range extension factor (<i>R</i><sub><i>e</i></sub> ~ 3-25), when operated in vacuum or in H<sub>2</sub>O and for reasonable dimensions. The adhesion layer was found to modestly impact the attenuation. Structures were fabricated as Au/Cr stripes (25 or 20 nm thick) on freestanding (20 or 30 nm thick) large-area Si<sub>3</sub>N<sub>4</sub> membranes clamped around their perimeter, and propagation of the long-range mode was observed and characterized in air and in H<sub>2</sub>O (and similar optical fluids). The measurements reported include an optical streak, mode outputs, output polarization, and MPA. Errors between measured and theoretical attenuations were below about 7% for all of the structures tested.
Keywords :
membranes; polaritons; surface plasmons; MPA; adhesion; dielectric membrane; long-range surface plasmon polaritons; membrane-supported metal stripes; mode outputs; optical streak; output polarization; Long range; membrane; plasmon; polariton; sensing; surface;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.918944