Title :
Static random access memories based on resonant interband tunneling diodes in the InAs/GaSb/AlSb material system
Author :
Shen, Jianbing ; Kramer, Gerhard ; Tehrani, S. ; Goronkin, H.
Author_Institution :
Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
We have fabricated SRAM´s based on resonant interband tunneling diodes in the InAs/AlSb/GaSb material system. The bistability and the switching principles are demonstrated. Numerical simulations of the memory characteristics of the SRAM cell are performed and used for comparing with experiments. Several key issues involving the applications of the device are also discussed.<>
Keywords :
III-V semiconductors; SRAM chips; aluminium compounds; circuit bistability; gallium compounds; indium compounds; resonant tunnelling diodes; InAs-GaSb-AlSb; RTD based memory; SRAM; bistability; memory characteristics; resonant interband tunneling diodes; static random access memories; switching principles; Application software; Diodes; Etching; Numerical simulation; Random access memory; Read-write memory; Research and development; Resonance; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
