Title :
Application and evaluation of direct-write electron beam for ASICs
Author :
Fujita, Minoru ; Shiozawa, Kousuke ; Kase, Tetsurou ; Hayakawa, Hajime ; Mizuno, Fumio ; Haruta, Ryo ; Murai, Fumio ; Okazaki, Shun
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
4/1/1988 12:00:00 AM
Abstract :
The application of direct-write electron-beam (DW-EB) technology to 1.3-μm fine geometry and high-density 24 K-gate CMOS VLSI is investigated. Particular attention is paid to EB radiation damage of MOS devices and the effectiveness of DW-EB for CMOS application-specific integrated circuit (ASIC) VLSIs. To increase throughput for direct-writing and maintain good resolution, a high-sensitivity EB resist and appropriate proximity-effect correction method are adopted. EB radiation damage cannot be observed when low-electron beam dosage is applied to thin 25-μm oxide lightly doped drain (LDD) structure devices, thus making DW-EB applicable for fabricating CMOS VLSIs. Good electrical characteristics, high reliability and good yield can also be obtained. The advantages of DW-EB for quick turnaround time and more efficient debugging capability by forming different VLSIs on the same wafer are discussed
Keywords :
CMOS integrated circuits; VLSI; electron beam lithography; integrated circuit technology; 1.3 micron; 25 micron; ASIC; CMOS VLSI; EB radiation damage; LDD; application; application-specific integrated circuit; custom ICs; debugging capability; different IC on same wafer; direct-write electron beam; electrical characteristics; evaluation; fine geometry; high-sensitivity EB resist; lightly doped drain; low-electron beam dosage; proximity-effect correction method; quick turnaround time; reliability; throughput; yield; Application specific integrated circuits; CMOS technology; Electron beams; Geometrical optics; Integrated circuit technology; MOS devices; Maintenance; Resists; Throughput; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
