Determination of the RF-noise source parameters in AlInAs/GaInAs-HEMT heterostructures based on measured noise temperature dependence against electric field

Author

Bergamaschi, C. ; Patrick, W. ; Baechtold, W.

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

142

Issue

5

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

339

Lastpage

344

Abstract

The noise temperature dependence on the electric field in an AlInAs/GaInAs-HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs-MESFETs and in AlInAs/GaInAs-HEMTs is remarkably different. For this reason a different model must be used for AlInAs/GaInAs-HEMTs. Based on the measured noise temperature dependence on the electric field, an analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; AlInAs-GaInAs; AlInAs/GaInAs-HEMT heterostructures; RF-noise source parameters; analytic noise model; electric field dependence; gate noise; microwave region; mm wave application; model; noise source parameters; noise temperature dependence;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19952184

Filename

487941