DocumentCode
774868
Title
A 600-kV, 10-mA DC Cockcroft-Walton Rectifier Using Silicon Diodes at 100 kc
Author
Reginato, Louis L. ; Smith, Bob H.
Author_Institution
Lawrence Radiation Laboratory University of California Berkeley, California
Volume
12
Issue
3
fYear
1965
fDate
6/1/1965 12:00:00 AM
Firstpage
274
Lastpage
278
Abstract
In this rectifier high-speed silicon diodes, etched circuit boards, and SF6 are combined in a style of construction that requires only the modest shop facilities of any typical small physics laboratory. This paper covers construction techniques, performance tests, electronic regulation, high-speed protection circuitry, and application of the rectifier to experimental equipment. The technique described can be extended to larger sizes providing several million volts.
Keywords
Circuit testing; Diodes; Electronic equipment testing; Etching; Laboratories; Physics; Printed circuits; Rectifiers; Silicon; Sulfur hexafluoride;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1965.4323635
Filename
4323635
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