Title :
Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs
Author :
Mazzanti, A. ; Verzellesi, G. ; Canali, Claudio ; Meneghesso, G. ; Zanoni, Enrico
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Universita di Modena e Reggio Emilia, Italy
fDate :
7/1/2002 12:00:00 AM
Abstract :
The physical origin of the kink and its dynamics are investigated in AlGaAs/GaAs doped-channel heterostructure field-effect transistors (HFETs) both through measurements and two-dimensional (2D) device simulations. The kink is shown to arise from the interaction of surface deep acceptors with impact-ionization-generated holes, the latter partially discharging the deep levels and therefore leading to conductive-channel widening and to drain-current increase. Under pulsed operation, kink dynamics is governed by hole emission and capture phenomena, prevailing at low and high drain-source voltages, respectively.
Keywords :
III-V semiconductors; aluminium compounds; deep levels; field effect transistors; gallium arsenide; impact ionisation; semiconductor device measurement; semiconductor device models; AlGaAs-GaAs; AlGaAs/GaAs; HFETs; capture phenomena; conductive-channel widening; deep levels; doped-channel heterostructure field effect transistors; drain-current increase; drain-source voltages; hole emission; impact-ionization-generated holes; kink dynamics; surface deep acceptors; two-dimensional device simulations; Gallium arsenide; HEMTs; Irrigation; MODFETs; Numerical simulation; Pulse measurements; Surface discharges; Time measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.1015205
