Normalized mutual integral difference method to extract threshold voltage of MOSFETs

Author

He, Jin ; Xi, Xuemei ; Chan, Mansun ; Cao, Kanyu ; Hu, Chenming ; Li, Yingxue ; Zhang, Xing ; Huang, Ru ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

23

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

428

Lastpage

430

Abstract

A novel normalized mutual integral difference (NMID) method is presented in this letter to extract the threshold voltage of MOSFETs. The basic principle of this method is to utilize the exponential-linear characteristics of MOSFETs current so as to obtain the normalized mutual integral difference extreme spectral characteristics. The proposed method is sensitive to channel length variation while being insensitive to parasitic resistance. The extracted results on the threshold voltage show a good consistency and have been compared with those obtained by the second-derivative technique. A good correlation between both methods has also been found.

Keywords

MOSFET; curve fitting; mathematical operators; semiconductor device measurement; voltage measurement; I-V characteristics; MOSFET; channel length variation; diffusion components; drift components; exponential-linear characteristics; extreme spectral characteristics; normalized mutual integral difference method; threshold voltage extraction; Extrapolation; Geometry; Laboratories; MOSFETs; Microelectronics; Parameter extraction; Solid modeling; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1015230

Filename

1015230