A simple and accurate method for extracting substrate resistance of RF MOSFETs

Author

Han, Jeonghu ; Je, Minkyu ; Shin, Hyungcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

23

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

434

Lastpage

436

Abstract

In this paper, a simple and accurate method was proposed for extracting substrate resistance of an RF MOSFET, the substrate of which is represented by a single resistor. The extraction results from the measured network parameters are presented for various bias conditions. Excellent agreement between the results of measurements and the model for the extracted substrate resistance was obtained up to 18 GHz. Also, the resistance extracted using the proposed method was shown to give scalable results.

Keywords

MOSFET; electric resistance measurement; microwave field effect transistors; microwave measurement; network parameters; semiconductor device models; 18 GHz; RF MOSFET model; RF MOSFETs; S-parameters; bias conditions; network parameters; scalable results; single resistor; substrate resistance extraction; Capacitance; Curve fitting; Electrical resistance measurement; Equivalent circuits; Immune system; MOSFETs; Predictive models; Radio frequency; Resistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.1015234

Filename

1015234