Correction to "A novel 3-D BiCMOS technology using selective epitaxy growth (SEG) and lateral solid phase epitaxial (LSPE)"

Author

Haitao Liu ; Kumar, Manoj ; Sin, Johnny K. O.

Volume

Issue

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

437

Lastpage

437

Keywords

BiCMOS integrated circuits; Cutoff frequency; Epitaxial growth; Silicon compounds; Solids;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

DOI

10.1109/LED.2002.1015235

Filename

1015235

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