Plasma-surface interaction and surface diffusion during silicon-based thin-film growth

Author

Hoefnagels, J.P.M. ; Langereis, E. ; Kessels, W.M.M. ; van de Sanden, M.C.M.

Author_Institution

Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands

Volume

33

Issue

2

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

234

Lastpage

235

Abstract

Insight into the interaction between plasma and the surface can be obtained from well-defined radical and ion beam studies using advanced surface diagnostics. Therefore, in this paper, a new ultrahigh vacuum setup is presented for a fundamental study of the plasma deposition process of hydrogenated amorphous silicon (a-Si:H). A first study of the surface diffusion process of plasma radicals is presented by visualizing the surface roughness evolution of the films as a function of bulk thickness and substrate temperature.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; plasma chemistry; plasma deposited coatings; plasma deposition; plasma-wall interactions; semiconductor growth; semiconductor thin films; silicon; surface diffusion; surface roughness; Si:H; hydrogenated amorphous silicon; plasma deposition; plasma radicals; plasma-surface interaction; silicon-based thin film growth; surface diagnostics; surface diffusion; surface roughness; ultrahigh vacuum setup; Amorphous silicon; Diffusion processes; Ion beams; Plasma diagnostics; Plasma temperature; Rough surfaces; Semiconductor thin films; Substrates; Surface roughness; Visualization; Plasma deposition; surface diffusion; surface reactions;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2005.845132

Filename

1420413