DocumentCode :
775251
Title :
Development of a prototype solid-state fault-current limiting and interrupting device for low-voltage distribution networks
Author :
Ahmed, M.M.R. ; Putrus, Ghanim ; Li Ran ; Penlington, Roger
Author_Institution :
Ind. Educ. Coll., Giza
Volume :
21
Issue :
4
fYear :
2006
Firstpage :
1997
Lastpage :
2005
Abstract :
This paper describes the development of a solid-state fault current limiting and interrupting device (FCLID) suitable for low-voltage distribution networks. The main components of the FCLID are a bidirectional semiconductor switch that can disrupt the short-circuit current, and a voltage clamping element that helps to control the current and absorb the inductive energy stored in the network during current interruption. Using a hysteresis-type control algorithm, the short-circuit current can be constrained according to a predefined profile. Insulated-gate bipolar transistors and diodes are used to construct the semiconductor switch. Varistors are used as the voltage clamping element. An effective method is adopted to improve the current sharing between parallel varistors in order to provide the required capability of energy absorption. An overall protection scheme for the FCLID is described. A prototype FCLID for 230-V single-phase, or 400-V three-phase, applications is developed and tested. Analyses and experiments are carried out to define the stresses that the main components in the FCLID are subject to. The results show that the developed prototype is capable of limiting a 3-kA prospective short-circuit current to 120 A for a period of 0.8 s, without exceeding the thermal limits of the chosen switches and varistors
Keywords :
diodes; distribution networks; fault current limiters; inductive energy storage; insulated gate bipolar transistors; interrupters; semiconductor switches; short-circuit currents; varistors; 120 A; 230 V; 3 kA; bidirectional semiconductor switch; current interruption; fault-current limitation and interrupting device; hysteresis-type control algorithm; inductive energy storage; insulated-gate bipolar transistors; low-voltage distribution networks; short-circuit current; solid-state prototype; varistors; voltage clamping element; Clamps; Fault currents; Hysteresis; Insulated gate bipolar transistors; Insulation; Prototypes; Solid state circuits; Switches; Varistors; Voltage control; Current limiter; electrical power distribution; fault current; semiconductor switch; varistor;
fLanguage :
English
Journal_Title :
Power Delivery, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8977
Type :
jour
DOI :
10.1109/TPWRD.2006.874584
Filename :
1705560
Link To Document :
بازگشت