A 2.4-GHz silicon bipolar oscillator with integrated resonator

Author

Soyuer, Mehmet ; Jenkins, Keith A. ; Burghartz, Joachim N. ; Ainspan, Herschel A. ; Canora, Frank J. ; Ponnapalli, Slaila ; Ewen, John F. ; Pence, William E.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

31

Issue

2

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

268

Lastpage

270

Abstract

A 2.4 GHz fully-monolithic silicon-bipolar oscillator circuit implemented in a 12 GHz BiCMOS technology is presented. The integrated resonator circuit uses three different versions of a 2 nH multilevel inductor and a wideband capacitive transformer. The measured Q factor is 9.3 for the three-level inductor. An oscillator phase noise of -78 dBc/Hz is achieved at 20 kHz offset. The circuit dissipates 50 mW from a 3.6 V supply

Keywords

Q-factor; UHF integrated circuits; UHF oscillators; elemental semiconductors; integrated circuit noise; phase noise; resonators; silicon; 12 GHz; 2.4 GHz; 3.6 V; 50 mW; BiCMOS technology; Q-factor; Si; Si bipolar oscillator; integrated resonator; monolithic oscillator circuit; multilevel inductor; oscillator phase noise; wideband capacitive transformer; BiCMOS integrated circuits; Inductors; Integrated circuit measurements; Integrated circuit technology; Oscillators; Phase noise; Q factor; Q measurement; Silicon; Wideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.488006

Filename

488006