DocumentCode
775339
Title
Time evolution of ion energy distributions for plasma doping
Author
Agarwal, Ankur ; Kushner, Mark J.
Author_Institution
Dept. of Chem. & Biomolecular Eng., Univ. of Illinois, Urbana, IL, USA
Volume
33
Issue
2
fYear
2005
fDate
4/1/2005 12:00:00 AM
Firstpage
252
Lastpage
253
Abstract
Plasma doping of semiconductors is being investigated for low-energy ion implantation to form ultra-shallow junctions. Ions are extracted from a quasi-dc plasma using a pulsed bias on the substrate. The shape of the resulting ion energy and angular distribution (IEAD) is particularly important with respect to obtaining desired junction characteristics. Images are presented of the time evolution of the IEAD in a plasma doping system.
Keywords
ion implantation; plasma materials processing; semiconductor doping; semiconductor junctions; angular distribution; ion energy distributions; low-energy ion implantation; plasma doping; quasiDC plasma; semiconductor doping; ultrashallow junctions; Inductors; Plasma accelerators; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sheaths; Plasma sources; Semiconductor device doping; Substrates; Voltage; Ion implantation; modeling; plasma; pulsed;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2005.845887
Filename
1420422
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