A 1 K×1 K high dynamic range CMOS image sensor with on-chip programmable region-of-interest readout

Author

Schrey, Olaf ; Huppertz, Jürgen ; Filimonovic, Goran ; Bussmann, A. ; Brockherde, Werner ; Hosticka, Bedrich J.

Author_Institution

Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany

Volume

37

Issue

7

fYear

2002

fDate

7/1/2002 12:00:00 AM

Firstpage

911

Lastpage

915

Abstract

An integrated 1024×1024 CMOS image sensor with programmable region-of-interest (ROI) readout and multiexposure technique has been developed and successfully tested. Size and position of the ROI is programmed based on multiples of a minimum readout kernel of 32×32 pixels. Since the dynamic range of the irradiance normally exceeds the electrical dynamic range of the imager that can be covered using a single integration time, a multiexposure technique has been implemented in the imager. Subsequent sensor images are acquired using different integration times and recomputed to form a single composite image. A newly developed algorithm performing the recomputation is presented. The chip has been realized in a 0.5-μm n-well standard CMOS process. The pixel pitch is 10 μm² and the total chip area is 164 mm ²

Keywords

CMOS image sensors; digital readout; integrated optoelectronics; 1024 pixel; active pixel sensor; analog in-pixel components; chip-area-saving digital readout; correlated double sampling; high dynamic range; integrated CMOS image sensor; multiexposure technique; n-well standard CMOS process; on-chip programmable region-of-interest readout; photodetector array; single composite image; smart imagers; CMOS image sensors; CMOS technology; Circuits and systems; Dynamic range; Image sensors; Layout; Lighting; Microelectronics; Photodiodes; Smart pixels;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2002.1015690

Filename

1015690