Deep erbium-ytterbium implantation codoping of low-loss silicon oxynitride waveguides

Author

Chelnokov, A.V. ; Lourtioz, J.M. ; Boucaud, Ph ; Bernas, H. ; Chaumont, J. ; Plowman, T.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France

Volume

31

Issue

8

fYear

1995

fDate

4/13/1995 12:00:00 AM

Firstpage

636

Lastpage

638

Abstract

The authors report the first photoluminescence studies and preliminary loss modulation measurements on low-loss planar silicon oxynitride optical waveguides co-implanted with Er and Yb. Deep high-dose ion implantation is used to create high concentration levels of Er and Yb dopants with the concentration profiles adapted to the guided pump mode (980 nm). It is found that Yb co-implantation at high concentrations (up to 1 atm.%) only reduces the initial Er ⁴I _13/2 level lifetime (5.3 ms) by less than 30%, while the 980 nm pump absorption is greatly increased. Loss modulation at 1.5 μm is detected in planar waveguides, thus indicating further possibility of using Er/Yb codoped SiON waveguides in active integrated optoelectronics

Keywords

deep levels; doping profiles; erbium; integrated optoelectronics; ion implantation; optical losses; optical planar waveguides; photoluminescence; silicon compounds; ytterbium; 1.5 micron; 980 nm; Er/Yb codoped SiON waveguides; SiON:Er,Yb; active integrated optoelectronics; concentration profiles; deep Erb/Yb implantation codoping; guided pump mode; high-dose ion implantation; loss modulation measurements; low-loss waveguides; photoluminescence studies; planar optical waveguides; pump absorption;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950455

Filename

384003