Title :
1 Gbit/s bias-free operation of 1.3 μm strained MQW-LDs in -40 to +85°C temperature range
Author :
Yamada, H. ; Senga, K. ; Sasaki, Y. ; Torikai, T. ; Uji, T.
Author_Institution :
KANSAI Electron. Res. Lab., NEC Corp., Otsu, Japan
fDate :
4/13/1995 12:00:00 AM
Abstract :
Bias-free 1.3 μm laser diodes (LDs) have been developed for gigabit/s transmission without temperature control. Power variation as low as 2 dB between -20°C and +85°C under 30 mA driving current has been attained by introducing strained multiple quantum well (MQW) and short cavity configurations. Wide eye opening has been realised under 1 Gbit/s zero-bias modulation in the temperature range -40 to +85°C
Keywords :
laser cavity resonators; laser transitions; optical fibre subscriber loops; optical interconnections; optical modulation; optical transmitters; quantum well lasers; -40 to 85 C; 1 Gbit/s; 1.3 micron; 30 mA; bias-free operation; gigabit/s transmission; laser diodes; semiconductor lasers; short cavity configurations; strained MQW LD; strained multiple quantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950435
