DocumentCode
776524
Title
Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18°
Author
Temmyo, J. ; Sugo, M.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
31
Issue
8
fYear
1995
fDate
4/13/1995 12:00:00 AM
Firstpage
642
Lastpage
644
Abstract
Epitaxial structures were designed for high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical-divergence emitting angle of 18°. A maximum free-space optical output of >500 mW and a singlemode-fibre coupled power of >250 mW were obtained
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; refractive index; semiconductor epitaxial layers; 250 mW; 500 mW; InGaAs-AlGaAs; epitaxial structures; free-space optical output; quantum-well lasers; singlemode-fibre coupled power; strained quantum well; vertical-divergence emitting angle;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950448
Filename
384007
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