• DocumentCode
    776532
  • Title

    Gain measurement of high characteristic temperature 1.3 μm GaInAsP/InP strained-layer quantum well lasers with temperature dependent reflectivity (TDR) mirror

  • Author

    Kasukawa, A. ; Iwai, N. ; Yamanaka, N. ; Hosotani, A. ; Yokouchi, N.

  • Author_Institution
    Res. & Dev. Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
  • Volume
    31
  • Issue
    8
  • fYear
    1995
  • fDate
    4/13/1995 12:00:00 AM
  • Firstpage
    644
  • Lastpage
    645
  • Abstract
    By comparing the optical gain of 1.3 μm strained-layer quantum well lasers with characteristic temperatures T0 of 150 K (high) and 60 K (typical), it is found that temperature insensitive net gain plays an important role in reducing the temperature sensitivity of the threshold current. The resonance frequency for high T0 lasers exhibits temperature insensitivity, resulting from the temperature insensitive net gain characteristics
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; laser variables measurement; optical modulation; quantum well lasers; 1.3 micron; 150 K; 60 K; GaInAsP-InP; characteristic temperature; net gain characteristics; optical gain; resonance frequency; strained-layer quantum well lasers; temperature dependent reflectivity mirror; temperature insensitive net gain; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950381
  • Filename
    384008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=776532