Low-threshold mesa-etched vertical-cavity InGaAs/GaAs surface-emitting lasers grown by MOCVD

Author

Mukaihara, T. ; Hayashi, Y. ; Hatori, N. ; Ohnoki, N. ; Matsutani, A. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan

Volume

31

Issue

8

fYear

1995

fDate

4/13/1995 12:00:00 AM

Firstpage

647

Lastpage

648

Abstract

The authors have demonstrated a low threshold current of 0.33 mA and a threshold current density of 380 A/cm² for MOCVD-grown InGaAs/GaAs vertical-cavity surface-emitting lasers with a pillar etched structure. The thermal characteristic of the fabricated device including thermal resistance and junction temperature rise is also discussed. Judging from this experiment, further reduction of threshold current can be expected by reducing nonradiative recombination and electrical resistance

Keywords

III-V semiconductors; electron-hole recombination; etching; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 0.33 mA; InGaAs-GaAs; MOCVD; electrical resistance; junction temperature rise; mesa-etched vertical-cavity surface-emitting lasers; nonradiative recombination; pillar etched structure; thermal characteristic; thermal resistance; threshold current; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950431

Filename

384010