Title :
Singlemode 1.3 μm Fabry-Perot lasers by mode suppression
Author :
Kozlowski, D.A. ; Young, J.S. ; England, J.M.C. ; Plumb, R.G.S.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
4/13/1995 12:00:00 AM
Abstract :
Focused Ga+ ion beam etched pits are used to simulate defects, reflective and nonradiative, in conventional 1.3 μm Fabry-Perot lasers. Combination of three defect sites positioned along the lasing filament results in a quasi-singlemode laser with 30 dB mode suppression and negligible rises in threshold current. The authors also report the appearance of a single enhanced spectral line below threshold
Keywords :
Fabry-Perot resonators; focused ion beam technology; laser modes; semiconductor lasers; sputter etching; 1.3 micrometre; Fabry-Perot lasers; defect sites; enhanced spectral line; ion beam etched pits; lasing filament; mode suppression; nonradiative defects; quasi-singlemode laser; reflective defects; semiconductor lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950413
