Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs

Author

Crupi, Giovanni ; Xiao, Dongping ; Schreurs, Dominique M M -P ; Limiti, Ernesto ; Caddemi, Alina ; De Raedt, Walter ; Germain, Marianne

Author_Institution

Electron. Eng. Dept., Rome Univ.

Volume

54

Issue

10

fYear

2006

Firstpage

3616

Lastpage

3622

Abstract

This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors under different bias conditions. Our experimental results show that a channel capacitance has to be added to the conventional forward "cold" model for modeling the device-under-test. The validity of the proposed extraction procedure has been verified by the very good agreement between simulated and measured scattering parameters up to 50 GHz

Keywords

III-V semiconductors; S-parameters; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; GaN; channel capacitance; forward cold model; high electron-mobility transistors; multibias equivalent-circuit extraction; scattering parameters; small-signal model; Aluminum gallium nitride; Electrons; Equivalent circuits; Frequency; Gallium nitride; HEMTs; MODFETs; Microelectronics; Microwave devices; Ohmic contacts; Gallium nitride; high electron-mobility transistor (HEMT); multibias; small-signal model;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.882403

Filename

1705679