• DocumentCode
    776744
  • Title

    Multistep characteristics in Si/SixGe1-x/Si heterojunction bipolar transistor with δ-doped base

  • Author

    Huang, F.Y. ; Zhou, G.L. ; Morkoç, H.

  • Volume
    31
  • Issue
    8
  • fYear
    1995
  • fDate
    4/13/1995 12:00:00 AM
  • Firstpage
    683
  • Lastpage
    684
  • Abstract
    The authors report regenerative switching in an npn Si/Si0.7 Ge0.3/Si heterojunction bipolar transistor with a δ-doped base. When operated in the avalanche regime the device exhibits switching characteristics in collector current against emitter-collector bias voltage. The I-V curve also shows multisteps between the OFF and ON states at room temperature, which may be due to the quantised energy levels formed by the thin δ-doped base
  • Keywords
    Ge-Si alloys; avalanche breakdown; doping profiles; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; δ-doped base; I-V curve; Si-SiGe-Si; avalanche regime; emitter-collector bias voltage; heterojunction bipolar transistor; multistep characteristics; quantised energy levels; regenerative switching; switching characteristics;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950441
  • Filename
    384029
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=776744