Title :
Multistep characteristics in Si/SixGe1-x/Si heterojunction bipolar transistor with δ-doped base
Author :
Huang, F.Y. ; Zhou, G.L. ; Morkoç, H.
fDate :
4/13/1995 12:00:00 AM
Abstract :
The authors report regenerative switching in an npn Si/Si0.7 Ge0.3/Si heterojunction bipolar transistor with a δ-doped base. When operated in the avalanche regime the device exhibits switching characteristics in collector current against emitter-collector bias voltage. The I-V curve also shows multisteps between the OFF and ON states at room temperature, which may be due to the quantised energy levels formed by the thin δ-doped base
Keywords :
Ge-Si alloys; avalanche breakdown; doping profiles; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; δ-doped base; I-V curve; Si-SiGe-Si; avalanche regime; emitter-collector bias voltage; heterojunction bipolar transistor; multistep characteristics; quantised energy levels; regenerative switching; switching characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950441
