DocumentCode
776767
Title
Constant output power contour prediction for BJTs operating under class C
Author
Chan, W.S. ; Yip, P.C.L
Author_Institution
Dept. of Electron. Eng., City Univh. of Hong Kong, Kowloon, Hong Kong
Volume
31
Issue
8
fYear
1995
fDate
4/13/1995 12:00:00 AM
Firstpage
675
Lastpage
677
Abstract
Constant output power contours have been predicted for silicon BJTs operating under class C and at UHF frequencies. This has been achieved by using a minimum of measurements and applying constant power gain circles, with the results obtained using the method showing good correlation
Keywords
UHF bipolar transistors; UHF power amplifiers; elemental semiconductors; power bipolar transistors; semiconductor device testing; silicon; BJT; Si; UHF frequencies; class C operation; constant output power contour prediction; constant power gain circles;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950414
Filename
384031
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