Title :
Deep level characterisation in GaAs FETs by means of the frequency dispersion of the output impedance
Author :
Reynoso-Hernandez, J.A. ; Escotte, L. ; Plana, R. ; Graffeuil, J.
Author_Institution :
Div. de Fisica Aplicada, CICESE, Ensenada, Mexico
fDate :
4/13/1995 12:00:00 AM
Abstract :
Based on measurements of output impedance against frequency at different temperatures, a new technique for deep level characterisation in microwave FETs is proposed. The procedure for calculating the time constant τ related to each trap is presented and from an Arrhenius plot, the respective activation energies are computed
Keywords :
III-V semiconductors; deep levels; electric impedance; gallium arsenide; microwave field effect transistors; semiconductor device testing; Arrhenius plot; GaAs; activation energies; deep level characterisation; frequency dispersion; microwave FETs; output impedance; time constant calculation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950465
