DocumentCode
776774
Title
Deep level characterisation in GaAs FETs by means of the frequency dispersion of the output impedance
Author
Reynoso-Hernandez, J.A. ; Escotte, L. ; Plana, R. ; Graffeuil, J.
Author_Institution
Div. de Fisica Aplicada, CICESE, Ensenada, Mexico
Volume
31
Issue
8
fYear
1995
fDate
4/13/1995 12:00:00 AM
Firstpage
677
Lastpage
678
Abstract
Based on measurements of output impedance against frequency at different temperatures, a new technique for deep level characterisation in microwave FETs is proposed. The procedure for calculating the time constant τ related to each trap is presented and from an Arrhenius plot, the respective activation energies are computed
Keywords
III-V semiconductors; deep levels; electric impedance; gallium arsenide; microwave field effect transistors; semiconductor device testing; Arrhenius plot; GaAs; activation energies; deep level characterisation; frequency dispersion; microwave FETs; output impedance; time constant calculation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950465
Filename
384032
Link To Document