Title :
Effects of anneal temperature on the electrical characteristics of nickel-based ohmic contacts to β-SiC
Author :
Arugu, D.O. ; Harris, G.L. ; Taylor, C.
fDate :
4/13/1995 12:00:00 AM
Abstract :
A study is presented of the effects of anneal temperature on the electrical characteristics of nickel-based ohmic contacts to β-SiC. Patterned metal structures on SiC films were annealed at temperatures ranging from 400 to 1200°C, and electrically probed. The lowest contact resistance was 1.41×10-4 Ωcm2 at 1000°C
Keywords :
annealing; contact resistance; nickel; ohmic contacts; semiconductor materials; semiconductor-metal boundaries; silicon compounds; β-SiC; 400 to 1200 C; Au-Ni-SiC; Mo-Ni-SiC; Ni-based ohmic contacts; anneal temperature; contact resistance; electrical characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950450
