Title :
Modeling of metallic carbon-nanotube interconnects for circuit simulations and a comparison with Cu interconnects for scaled technologies
Author :
Raychowdhury, Arijit ; Roy, Kaushik
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Semiconducting carbon nanotubes (CNTs) have gained immense popularity as possible successors to silicon as the channel material for ultrahigh-performance field-effect transistors (FETs). On the other hand, their metallic counterparts have often been regarded as ideal interconnects for future technology generations. Owing to their high current densities and increased reliability, metallic single-walled CNTs (SWCNTs) have been subjects of fundamental research, both in theory, as well as experiments. Metallic CNTs have been modeled for radio-frequency (RF) applications using a transmission-line model. In this paper, we present an efficient circuit-compatible RLC model for metallic SWCNTs, and analyze the impact of SWCNTs on the performance of ultrascaled digital very large scale integration (VLSI) design.
Keywords :
RLC circuits; VLSI; carbon nanotubes; circuit simulation; copper; field effect transistors; integrated circuit interconnections; integrated circuit modelling; radiofrequency integrated circuits; VLSI design; channel material; circuit simulations; circuit-compatible RLC model; copper interconnects; current density; field-effect transistors; interconnect delay; metallic carbon-nanotube interconnects; radio-frequency applications; semiconducting carbon nanotubes; single-walled carbon nanotubes; transmission line model; ultrascaled digital very large scale integration design; Carbon nanotubes; Circuit simulation; FETs; Integrated circuit interconnections; Organic materials; Radio frequency; Semiconductivity; Semiconductor materials; Silicon; Very large scale integration; Carbon nanotube; interconnect delay; interconnects;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2005.853702
