DocumentCode
776886
Title
Low-Power Cache Design Using 7T SRAM Cell
Author
Aly, Ramy E. ; Bayoumi, Magdy A.
Author_Institution
Center of Adv. Comput. Studies, Louisiana Univ., Lafayette, LA
Volume
54
Issue
4
fYear
2007
fDate
4/1/2007 12:00:00 AM
Firstpage
318
Lastpage
322
Abstract
On-chip cache consumes a large percentage of the whole chip area and expected to increase in advanced technologies. Charging/discharging large bit lines capacitance represents a large portion of power consumption during a write operation. We propose a novel write mechanism which depends only on one of the two bit lines to perform a write operation. Therefore, the proposed 7T SRAM cell reduces the activity factor of discharging the bit line pair to perform a write operation. Experimental results using HSPICE simulation shows that the write power saving is at least 49%. Both read delay and static noise margin are maintained after carefully sizing the cell transistors
Keywords
SRAM chips; cache storage; low-power electronics; 7T SRAM cell; HSPICE simulation; cell transistor sizing; low-power cache design; on-chip cache; two bit lines; write mechanism; write operation; CMOS technology; Capacitance; Delay; Energy consumption; Inverters; Maintenance; Noise reduction; Predictive models; Random access memory; Voltage; Low power; SRAM cell; on-chip cache;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2006.877276
Filename
4155050
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