• DocumentCode
    776886
  • Title

    Low-Power Cache Design Using 7T SRAM Cell

  • Author

    Aly, Ramy E. ; Bayoumi, Magdy A.

  • Author_Institution
    Center of Adv. Comput. Studies, Louisiana Univ., Lafayette, LA
  • Volume
    54
  • Issue
    4
  • fYear
    2007
  • fDate
    4/1/2007 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    322
  • Abstract
    On-chip cache consumes a large percentage of the whole chip area and expected to increase in advanced technologies. Charging/discharging large bit lines capacitance represents a large portion of power consumption during a write operation. We propose a novel write mechanism which depends only on one of the two bit lines to perform a write operation. Therefore, the proposed 7T SRAM cell reduces the activity factor of discharging the bit line pair to perform a write operation. Experimental results using HSPICE simulation shows that the write power saving is at least 49%. Both read delay and static noise margin are maintained after carefully sizing the cell transistors
  • Keywords
    SRAM chips; cache storage; low-power electronics; 7T SRAM cell; HSPICE simulation; cell transistor sizing; low-power cache design; on-chip cache; two bit lines; write mechanism; write operation; CMOS technology; Capacitance; Delay; Energy consumption; Inverters; Maintenance; Noise reduction; Predictive models; Random access memory; Voltage; Low power; SRAM cell; on-chip cache;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2006.877276
  • Filename
    4155050