DocumentCode :
77689
Title :
A 22 nm 15-Core Enterprise Xeon® Processor Family
Author :
Rusu, Stefan ; Muljono, Harry ; Ayers, David ; Tam, Simon ; Wei Chen ; Martin, Andrew ; Shenggao Li ; Vora, Sujal ; Varada, Raj ; Wang, Eddie
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Volume :
50
Issue :
1
fYear :
2015
fDate :
Jan. 2015
Firstpage :
35
Lastpage :
48
Abstract :
This paper describes a 4.3B transistors, 15-cores, 30-threads enterprise Xeon® processor with a 37.5 MB shared L3 cache implemented in a 22 nm 9M Hi-K metal gate tri-gate process. A modular floorplan methodology enables easy chops to 10 and 6 cores. Multiple clock and voltage domains are used to reduce power consumption. The clock distribution uses a single PLL per column to save power and minimize deskew crossing points. Integrated PCIe Gen3 and Quick Path Interconnect® (QPI) ports operate at 8GT/s. The 4-channel memory interface supports both 1866 MT/s DDR3 and a new memory buffer interface running at 2667 MT/s on the same pins. The core, cache and I/O recovery techniques improve manufacturing yields and enable multiple product flavors from the same silicon die.
Keywords :
cache storage; clock distribution networks; high-k dielectric thin films; integrated circuit layout; power consumption; 15-core enterprise Xeon processor family; 30-threads enterprise Xeon processor; 4-channel memory interface; 4.3B transistors; 9M Hi-K metal gate tri-gate process; DDR3; I/O recovery techniques; QPI ports; clock distribution; deskew crossing point minimization; integrated PCIe Gen3; manufacturing yields; memory buffer interface; modular floorplan methodology; multiple clock; power consumption reduction; power saving; quick path interconnect ports; shared L3 cache; silicon die; single PLL per column; size 22 nm; storage capacity 37.5 Mbit; voltage domains; Arrays; Bandwidth; Clocks; Metals; Phase locked loops; Servers; Transistors; 22 nm process technology; Circuit design; clock distribution; computer architecture; core recovery; leakage reduction; microprocessor; voltage domains;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2014.2368933
Filename :
6975254
Link To Document :
بازگشت