Study on Switching Characteristics of Reversely Switched Dynistor With an N-Buffer Layer

In this paper, an N-buffer layer has been introduced into the reversely switched dynistor (RSD). The relationship between the buffer layer and the device characteristics, together with the interaction among structural parameters, is discussed by the orthogonal method in detail. Based on the simulation results, buffer thickness W_n-buffer and buffer concentration N_n-buffer, N⁺ emitter concentration N_n+, and P⁺ emitter concentration N_p+ at anode can all affect the maximum turn-ON voltage U_Fmax on the RSD. Furthermore, the U_Fmax increases with increasing W_n-buffer or decreasing N_p+, and if N_n-buffer becomes higher continuously, the U_Fmax slightly decreases first, and then dramatically goes up. Besides, the interaction between N_n-buffer and W_n-buffer has a dramatic impact on the U_Fmax. When N_n-buffer = 1E17 cm^-3, W_n-buffer = 10 μm, N_p+ = 1E18 cm^-3, and N_n+ = 1E20 cm^-3, U_Fmax reaches its minimum in all the simulations. The experimental results verify the device characteristic´s improvement by introducing the buffer layer.