DocumentCode :
776924
Title :
A gigasample/second 5-b ADC with on-chip track and hold based on an industrial 1 μm GaAs MESFET E/D process
Author :
Hagelauer, Richard ; Oehler, Frank ; Rohmer, Günter ; Sauerer, Josef ; Seitzer, Dieter
Author_Institution :
Fraunhofer-Inst. fuer Integrierte Schaltungen, Erlangen, Germany
Volume :
27
Issue :
10
fYear :
1992
fDate :
10/1/1992 12:00:00 AM
Firstpage :
1313
Lastpage :
1320
Abstract :
To enhance the dynamic accuracy of high-speed A/D conversion, a 5-b flash converter with on-chip track and hold circuitry (T&H) was developed. The design is based on TriQuint´s commercial 1 μm GaAs E/D MESFET process. Dynamic characterization was performed up to 1 gigasample/second (GS/s). An accuracy of 4.4 effective bits even at 1 GS/s with full Nyquist input was achieved. A comparison showing the accuracy with T&H in operation and in tracking-only mode is given. The outstanding performance is due to a carefully designed and the use of differential source-coupled FET logic (SCFL) in the converter
Keywords :
III-V semiconductors; analogue-digital conversion; digital integrated circuits; direct coupled FET logic; field effect integrated circuits; gallium arsenide; 1 micron; GaAs; GaAs MESFET E/D process; TriQuint commercial process; differential source-coupled FET logic; dynamic accuracy; dynamic characterization; flash converter; full Nyquist input; high-speed A/D conversion; on-chip track and hold; tracking-only mode; Clocks; Digital signal processing; Digital systems; FETs; Gallium arsenide; Logic design; MESFET circuits; Radar signal processing; Radar tracking; Signal resolution;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.156431
Filename :
156431
Link To Document :
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