Contactless electromodulation for the nondestructive, room-temperature analysis of wafer-sized semiconductor device structures

Author

Pollak, Fred H. ; Krystek, Wojciech ; Leibovitch, Mark ; Gray, M.L. ; Hobson, W.S.

Author_Institution

Brooklyn Coll., City Univ. of New York, NY, USA

Volume

1

Issue

4

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1002

Lastpage

1010

Abstract

This paper reviews the use of the contactless, nondestructive electromodulation methods of photoreflectance and contactless electroreflectance for the room temperature characterization/qualification of semiconductor device structures, including heterojunction bipolar transistors (HBT´s), pseudomorphic high electron mobility transistors, quantum-well lasers, vertical cavity surface-emitting lasers, multiple-quantum-well infrared detectors, and solar cells. Special attention is paid to some recent results on (a) the illumination dependence of the evaluated electric fields (and associated doping levels) in the emitter/base and collector/base regions of GaAs-GaAlAs HBT´s and (b) a pseudomorphic InGaAs-GaAs-InGaP 0.98 μm single-quantum-well laser structure

Keywords

III-V semiconductors; aluminium compounds; electric field measurement; electro-optical modulation; electroreflectance; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; infrared detectors; photoreflectance; quantum well lasers; semiconductor device testing; semiconductor quantum wells; solar cells; surface emitting lasers; 0.98 mum; GaAs-GaAlAs; GaAs-GaAlAs HBT; InGaAs-GaAs-InGaP; collector/base region; contactless electromodulation; contactless electroreflectance; doping levels; electric fields; emitter/base region; heterojunction bipolar transistors; illumination dependence; multiple-quantum-well infrared detectors; nondestructive room-temperature analysis; photoreflectance; pseudomorphic InGaAs-GaAs-InGaP single-quantum-well laser structure; pseudomorphic high electron mobility transistor; quantum-well lasers; solar cells; vertical cavity surface-emitting lasers; wafer-sized semiconductor device structures; Electron mobility; HEMTs; Heterojunction bipolar transistors; MODFETs; PHEMTs; Qualifications; Semiconductor devices; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.488398

Filename

488398