• DocumentCode
    777065
  • Title

    Monolithic integration of vertical-cavity laser diodes with refractive GaAs microlenses

  • Author

    Strzelecka, E.M. ; Robinson, G.D. ; Peters, M.G. ; Peters, F.H. ; Coldren, L.A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    31
  • Issue
    9
  • fYear
    1995
  • fDate
    4/27/1995 12:00:00 AM
  • Firstpage
    724
  • Lastpage
    725
  • Abstract
    Beam collimation and focusing, necessary for practical use of vertical-cavity laser diodes, is achieved by the monolithic integration of lasers with refractive microlenses etched on the back side of the GaAs substrate. For 7 μm diameter lasers, an original beam divergence of 6.5° was reduced to 1.9° and increased to 12.3° with lenses of focal lengths ~220 μm, and ~60 μm, respectively
  • Keywords
    III-V semiconductors; focusing; gallium arsenide; integrated optics; laser cavity resonators; lenses; optical fabrication; semiconductor lasers; 7 micron; GaAs; GaAs substrate; beam collimation; focusing; monolithic integration; refractive GaAs microlenses; vertical-cavity laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950483
  • Filename
    384071