DocumentCode
777065
Title
Monolithic integration of vertical-cavity laser diodes with refractive GaAs microlenses
Author
Strzelecka, E.M. ; Robinson, G.D. ; Peters, M.G. ; Peters, F.H. ; Coldren, L.A.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
31
Issue
9
fYear
1995
fDate
4/27/1995 12:00:00 AM
Firstpage
724
Lastpage
725
Abstract
Beam collimation and focusing, necessary for practical use of vertical-cavity laser diodes, is achieved by the monolithic integration of lasers with refractive microlenses etched on the back side of the GaAs substrate. For 7 μm diameter lasers, an original beam divergence of 6.5° was reduced to 1.9° and increased to 12.3° with lenses of focal lengths ~220 μm, and ~60 μm, respectively
Keywords
III-V semiconductors; focusing; gallium arsenide; integrated optics; laser cavity resonators; lenses; optical fabrication; semiconductor lasers; 7 micron; GaAs; GaAs substrate; beam collimation; focusing; monolithic integration; refractive GaAs microlenses; vertical-cavity laser diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950483
Filename
384071
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