Evaluation of defect-related diffusion in semiconductors by electrooptical sampling

Author

Biernacki, Paul D. ; Lee, Henry ; Mickelson, Alan R.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

Volume

1

Issue

4

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1037

Lastpage

1046

Abstract

The electrooptical sampling technique is used to assess the electrical behavior of Ohmic contact regions in GaAs. For this purpose unique Ohmic contact coplanar waveguides were fabricated and tested. A reduced electrooptical sampling signal is detected in certain Ohmic contact regions. Since the electrical fields present in this device are known a priori, the deviation of the electrooptical signal from its nominal value is attributed to a deviation in the electrooptical coefficient. Defects introduced during the annealing step of the Ohmic contact accelerated by existing dislocations are discussed as a mechanism capable of disrupting the electrooptic coefficient. A simple phenomenological diffusion model is presented to explain the mechanism responsible for the nulling of the electrooptical coefficient

Keywords

III-V semiconductors; annealing; coplanar waveguides; diffusion; dislocation interactions; electro-optical modulation; gallium arsenide; microwave measurement; ohmic contacts; signal sampling; GaAs; Ohmic contact coplanar waveguides; Ohmic contact regions; annealing step; defect introduction; defect-related diffusion; dislocations; electrical behavior; electrical fields; electrooptical coefficient nulling; electrooptical sampling; phenomenological diffusion model; reduced electrooptical sampling signal; semiconductors; Acceleration; Annealing; Coplanar waveguides; Electrooptic devices; Gallium arsenide; Ohmic contacts; Sampling methods; Semiconductor waveguides; Signal detection; Testing;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.488680

Filename

488680