• DocumentCode
    777285
  • Title

    Body contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression

  • Author

    Suemitsu, T. ; Enoki, T. ; Ishii, Y.

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    31
  • Issue
    9
  • fYear
    1995
  • fDate
    4/27/1995 12:00:00 AM
  • Firstpage
    758
  • Lastpage
    759
  • Abstract
    The author investigate the effects of body contacts in InP-based In0.52Al0.48As/In0.53Ga0.47 As HEMTs. A body contact connecting a floating InAlAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p+-region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel resulting in higher breakdown voltage and kink-free I/V characteristics
  • Keywords
    aluminium compounds; avalanche breakdown; characteristics measurement; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; ohmic contacts; HEMTs; I/V characteristics; InGaAs-InAlAs-InP; InP; body contacts; breakdown voltage; buried p-layer; floating buffer; impact ionisation; kink suppression; ohmic electrode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950496
  • Filename
    384094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=777285