Photoluminescence, Raman, and infrared diagnosis of GaAs-AlGaAs superlattices for intersubband infrared detection

Author

Feng, Zhe C. ; Perkowitz, Sidney ; Cen, Jianmin ; Bajaj, Krishan K. ; Kinell, Don K. ; Whitney, R.L.

Author_Institution

Dept. of Phys., Emory Univ., Atlanta, GA, USA

Volume

1

Issue

4

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1119

Lastpage

1125

Abstract

We present optical diagnosis of GaAs-AlGaAs superlattices grown by molecular beam epitaxy for use as 8-20 μm infrared detectors, that combines photoluminescence, Raman, and Fourier transform infrared spectroscopies. Various structural and physical parameters were obtained by theoretical analysis of the optical results. The use of multiple optical techniques offers comprehensive characterization and further understanding of the physics of long wavelength infrared detectors

Keywords

Fourier transform spectra; III-V semiconductors; Raman spectra; aluminium compounds; gallium arsenide; infrared detectors; infrared spectra; molecular beam epitaxial growth; photoluminescence; semiconductor superlattices; 8 to 20 mum; Fourier transform infrared spectroscopy; GaAs-AlGaAs; GaAs-AlGaAs superlattices; Raman spectroscopy; infrared diagnosis; intersubband infrared detection; long wavelength infrared detectors; molecular beam epitaxy; multiple optical techniques; optical diagnosis; photoluminescence; physical parameters; structural parameters; Gallium arsenide; Infrared detectors; Infrared spectra; Molecular beam epitaxial growth; Optical scattering; Optical superlattices; Photoluminescence; Physics; Raman scattering; Spectroscopy;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.488690

Filename

488690