DocumentCode
777305
Title
K-band GaInAs/InP channel power HEMTs
Author
Matloubian, M. ; Liu, T. ; Jelloian, L.M. ; Thompson, M.A. ; Rhodes, R.A.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
Volume
31
Issue
9
fYear
1995
fDate
4/27/1995 12:00:00 AM
Firstpage
761
Lastpage
762
Abstract
The authors report on the DC and power performance of GaInAs/lnP composite channel HEMTs with a 30 Å GaInAs channel. Devices with gate length of 0.15 μm exhibit off-state drain-to-source breakdown voltages of more than 10 V and onstate drain-to-source breakdown voltages of 8 V. Using a 450 μm wide HEMT, an output power of more than 280 mW (0.62 W/mm) has been obtained with power-added efficiency of 46% at 20 GHz
Keywords
III-V semiconductors; electric breakdown; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; 0.15 micron; 20 GHz; 280 mW; 30 angstrom; 450 micron; 46 percent; 8 to 10 V; DC performance; GaInAs-InP; K-band; composite channel HEMTs; gate length; off-state drain-to-source breakdown voltages; onstate drain-to-source breakdown voltages; output power; power HEMTs; power-added efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950482
Filename
384096
Link To Document