Title :
Method for extracting deep submicrometre MOSFET parameters
Author :
Fikry, W. ; Ghibaudo, G. ; Haddara, H. ; Cristoloveanu, S. ; Dutoit, M.
Author_Institution :
Dept. of Electron. & Commun. Eng., Ain Shams Univ., Cairo, Egypt
fDate :
4/27/1995 12:00:00 AM
Abstract :
As the MOSFET channel length shrinks to 0.1 μm, the influence of the lateral field on the device characteristics becomes increasingly important even at low drain voltage (10 mV). The authors present a new method which takes into account the effect of the lateral field to extract the deep submicrometre MOSFET parameters such as threshold voltage, effective channel length, effective mobility and parasitic series resistance
Keywords :
MOSFET; carrier mobility; characteristics measurement; electric resistance measurement; semiconductor device testing; 0.1 micron; 10 mV; MOSFET channel length; deep submicrometre MOSFET parameters; device characteristics; drain voltage; effective channel length; effective mobility; lateral field; parasitic series resistance; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950481
