DocumentCode :
777315
Title :
Spectroscopic study of red light emission in porous silicon
Author :
Prokes, S.M.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
1
Issue :
4
fYear :
1995
fDate :
12/1/1995 12:00:00 AM
Firstpage :
1140
Lastpage :
1144
Abstract :
Since bulk silicon does not emit light in the visible part of the spectrum, the discovery of visible luminescence from porous silicon has been quite surprising and has generated significant interest. This material differs from bulk silicon in one important way, in that it consists of interconnected silicon nanostructures, having very large surface to volume ratios. The first emission mechanism proposed involved carrier recombination within quantum size silicon particles, but more recent work has shown that surface emission models may be more likely. The problems with the quantum confinement model will be discussed in view of current data, and an oxygen center luminescence model will be discussed, with supporting experimental data. A direct correlation between the presence of these centers and the red photoluminescence in both as-made and oxidized PSi will be presented
Keywords :
elemental semiconductors; oxidation; particle size; photoluminescence; porous materials; silicon; surface phenomena; Si; carrier recombination; interconnected silicon nanostructures; oxidized PSi; oxygen center luminescence model; porous Si; quantum confinement model; quantum size silicon particles; red light emission; surface emission models; very large surface to volume ratios; visible luminescence; Luminescence; Nanostructured materials; Phonons; Photoluminescence; Potential well; Radiative recombination; Satellites; Semiconductor materials; Silicon; Spectroscopy;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.488692
Filename :
488692
Link To Document :
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