Title :
Methods for accurately evaluating interelectrode capacitance and frequency tuning range in microwave GaAs FET switches
Author :
Rossek, S.J. ; Free, C.E.
Author_Institution :
Commun. Res. Group, Middlesex Univ., London, UK
fDate :
4/27/1995 12:00:00 AM
Abstract :
A new method for evaluating microelectrode capacitance in the modelling of microwave GaAs FET switches is presented. The method has been verified for two different FET gate structures over X-band. Expressions for predicting resonances in the switch performances given yield useful design information applicable to the frequency range 1-20 GHz
Keywords :
III-V semiconductors; capacitance; field effect transistor switches; gallium arsenide; microwave field effect transistors; semiconductor device models; tuning; 1 to 20 GHz; FET gate structures; GaAs; design information; frequency tuning range; interelectrode capacitance; microelectrode capacitance; microwave FET switches; modelling; switch performances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950470
