DocumentCode
777579
Title
Ultra-dynamic Voltage scaling (UDVS) using sub-threshold operation and local Voltage dithering
Author
Calhoun, Benton H. ; Chandrakasan, Anantha P.
Author_Institution
Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume
41
Issue
1
fYear
2006
Firstpage
238
Lastpage
245
Abstract
Local voltage dithering provides near optimum savings when workload varies for fine-grained blocks. Combining this approach with sub-threshold operation permits ultra-dynamic voltage scaling from 1.1 V to below 300 mV for a 90-nm test chip. Operating at 330 mV provides minimum energy per cycle at 9× less energy than ideal shutdown for reduced performance scenarios. Measurements from the test chip characterize the impact of temperature on the minimum energy point.
Keywords
integrated circuit technology; low-power electronics; nanotechnology; 300 to 1100 mV; 90 nm; UDVS; local voltage dithering; low-power circuits; sub-threshold operation; ultra-dynamic voltage scaling; Circuit testing; Dynamic voltage scaling; Energy consumption; Energy measurement; Finite impulse response filter; Frequency; Layout; Semiconductor device measurement; Temperature; Voltage control; Dynamic voltage scaling; low-power circuits; sub-threshold operation; voltage dithering;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2005.859886
Filename
1564364
Link To Document