Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors

Author

Boeuf, Frédéric ; Jehl, Xavier ; Sanquer, Marc ; Skotnicki, Thomas

Volume

2

Issue

3

fYear

2003

Firstpage

144

Lastpage

148

Abstract

Low temperature transport measurements in ultra-short silicon field effect transistors with deliberately nonoverlapping gates show periodic Coulomb blockade oscillations. Despite its relatively small charging energy (≈2 meV) this single-electron effect is promising because it is controlled by geometrical confinement between the nonoverlapped extensions acting as tunnel barriers. Remarkably these single electron devices are excellent field effect transistors at room temperature.

Keywords

Coulomb blockade; MOSFET; cryogenic electronics; nanoelectronics; semiconductor quantum dots; single electron transistors; 16 nm; 2 meV; 4.2 K; Si-Si_0.75Ge_0.25; controlled single-electron effects; cryogenic electronics; deliberately nonoverlapping gates; electrostatically defined quantum dot; geometrical confinement; low temperature transport measurements; nanotechnology; nonoverlapped MOSFET; nonoverlapped ultra-short silicon field effect transistors; periodic Coulomb blockade oscillations; quantum effect semiconductor devices; relatively small charging energy; room temperature; tunnel barriers; Current measurement; FETs; Geometry; Lithography; MOSFETs; Quantum dots; Shape control; Silicon; Temperature measurement; Voltage;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2003.817230

Filename

1230114