DocumentCode :
777623
Title :
Radiation Induced Regeneration through the P-N Junction Isolation in Monolithic I/C´s
Author :
Kinoshita, G. ; Kleiner, C.T. ; Johnson, E.D.
Author_Institution :
Autonetics, A Division of North American Aviation, Inc. 3370 Miraloma Avenue Anaheim, California 92803
Volume :
12
Issue :
5
fYear :
1965
Firstpage :
83
Lastpage :
90
Abstract :
Some monolithic integrated circuits have been found to display a regenerative interaction between substrate parasitics and the intended semiconductor circuit elements when exposed to ionizing radiation. One manifestation of this effect can result in a bi-stable operating condition which prevents proper integrated circuit functioning until the power source is reduced. Experimental and analytic methods are described which have been used to determine the susceptibility of a specific type of monolithic integrated circuit to regenerative operation. The analytic methods predicting the form of the regenerative transient effect rely heavily on the use of an automated digital computer code termed Transient Radiation Analysis by Computer (TRAC) which mechanizes the complex nonlinear equations that simulate the semiconductor behavior.
Keywords :
Analytical models; Computational modeling; Displays; Ionizing radiation; Monolithic integrated circuits; Nonlinear equations; P-n junctions; Predictive models; Substrates; Transient analysis;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1965.4323903
Filename :
4323903
Link To Document :
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