DocumentCode :
777645
Title :
A 23.6 GHz sub-half-micrometer E/D MODFET divide-by-32/64 static prescaler
Author :
Rohdin, Hans ; Straznicky, Joseph ; Jekat, Hans ; Nagy, Avelina ; Fischer-Colbrie, Alice ; Mars, Dan E. ; Jaeger, Rolf
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Volume :
27
Issue :
10
fYear :
1992
fDate :
10/1/1992 12:00:00 AM
Firstpage :
1353
Lastpage :
1358
Abstract :
An application-ready prescaler with performance competitive with state-of-the-art R&D dividers was designed to be a high-performance replacement for standard ECL parts in instruments. It is fabricated in a proven self-aligned contact sub-half-micrometer GaAs-based enhancement/depletion-mode (E/D-mode) MODFET IC process that utilizes sidewall-spacer self-alignment technology to obtain 0.3-0.5 μm gate length with conventional high-throughput contact lithography. With pseudomorphic InGaAs channels, 30 MHz to 23.6 GHz prescaler operation is demonstrated at room temperature. The performance improves at 0°C, while at 70°C the upper frequency typically drops by 2 GHz. Correct high-speed pulse-mode operation requires (1) presetting which does not degrade the performance and (2) suppression of self-oscillation during quiet periods between pulse bursts. The circuit design provides for both, and pulse-mode operation without ringing, or pulse loss, at 22.4 GHz (present testing limit) has been confirmed
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; scaling circuits; 0 to 70 degC; 0.3 to 0.5 micron; 23.6 GHz; AlGaAs-InGaAs-GaAs; E/D MODFET IC process; application-ready prescaler; circuit design; divide-by-32/64 static prescaler; gate length; high-speed pulse-mode operation; high-throughput contact lithography; microwave instruments; pseudomorphic InGaAs channels; self-oscillation suppression; sidewall-spacer self-alignment technology; Circuit testing; Degradation; Frequency; HEMTs; Indium gallium arsenide; Instruments; Lithography; MODFET integrated circuits; Pulse circuits; Temperature;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.156437
Filename :
156437
Link To Document :
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